A model of the leakage current in n-channel silicon-on-sapphire most's
نویسنده
چکیده
2014 The existence of a direct drain to source leakage current is experimentally demonstrated on n-channel SOS MOS transistors. The measured currents are shown to vary according to a model of an inversion channel at the sapphire interface working in the weak inversion regime. A value of interface state density at the silicon sapphire interface of 1012 cm-2 eV-1 is determined by static I(V) measurement. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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